Upright-standing SnO2 nanowalls: Fabrication, dual-photosensitization and photovoltaic properties

Authors
Shinde, Dipak V.Lim, IseulKim, Chang SamLee, Joong KeeMane, Rajaram S.Han, Sung-Hwan
Issue Date
2012-07-23
Publisher
ELSEVIER
Citation
CHEMICAL PHYSICS LETTERS, v.542, pp.66 - 69
Abstract
We report on fabrication of upright-standing SnO2 nanowalls aligned on FTO substrates by a facile wet chemical method at low temperature. These nanowalls are dual-photosensitized with CdS quantum dots and Z907 dye molecules in order to construct panchromatic dye-sensitized solar cells. We demonstrate that thin CdS quantum dot layer not only acts as a blocking layer preventing recombination of charge carriers, but also contributes as a light absorber. A 158% improvement in power conversion efficiency is observed, which is attributed to improved light absorption, reduced recombination and improved charge collection in presence of CdS quantum dot interlayer. (C) 2012 Elsevier B. V. All rights reserved.
Keywords
SOLAR-CELLS; DYE; EFFICIENCY; TIO2; CDS; SOLAR-CELLS; DYE; EFFICIENCY; TIO2; CDS; Upright-standing SnO2 nanowalls; Fabrication; dual-photosensitization; photovoltaic properties
ISSN
0009-2614
URI
https://pubs.kist.re.kr/handle/201004/129055
DOI
10.1016/j.cplett.2012.05.061
Appears in Collections:
KIST Article > 2012
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE