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dc.contributor.authorYoon, Jong Moon-
dc.contributor.authorShin, Dong Ok-
dc.contributor.authorYin, You-
dc.contributor.authorSeo, Hyeon Kook-
dc.contributor.authorKim, Daewoon-
dc.contributor.authorKim, Yong In-
dc.contributor.authorJin, Jung Ho-
dc.contributor.authorKim, Yong Tae-
dc.contributor.authorBae, Byeong-Soo-
dc.contributor.authorKim, Sang Ouk-
dc.contributor.authorLee, Jeong Yong-
dc.date.accessioned2024-01-20T14:32:35Z-
dc.date.available2024-01-20T14:32:35Z-
dc.date.created2021-08-31-
dc.date.issued2012-06-29-
dc.identifier.issn0957-4484-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/129136-
dc.description.abstractMushroom-shaped phase change memory (PCM) consisting of a Cr/In3Sb1Te2 (IST)/TiN (bottom electrode) nanoarray was fabricated via block copolymer lithography and single-step dry etching with a gas mixture of Ar/Cl-2. The process was performed on a high performance transparent glass-fabric reinforced composite film (GFR Hybrimer) suitable for use as a novel substrate for flexible devices. The use of GFR Hybrimer with low thermal expansion and flat surfaces enabled successful nanoscale patterning of functional phase change materials on flexible substrates. Block copolymer lithography employing asymmetrical block copolymer blends with hexagonal cylindrical self-assembled morphologies resulted in the creation of hexagonal nanoscale PCM cell arrays with an areal density of approximately 176 Gb/in(2).-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectCHANGE MEMORY-
dc.subjectBLOCK-COPOLYMERS-
dc.subjectLITHOGRAPHY-
dc.subjectARRAYS-
dc.subjectFILMS-
dc.subjectGRAPHOEPITAXY-
dc.subjectTRANSPARENT-
dc.subjectTRANSISTORS-
dc.subjectAREA-
dc.titleFabrication of high-density In3Sb1Te2 phase change nanoarray on glass-fabric reinforced flexible substrate-
dc.typeArticle-
dc.identifier.doi10.1088/0957-4484/23/25/255301-
dc.description.journalClass1-
dc.identifier.bibliographicCitationNANOTECHNOLOGY, v.23, no.25-
dc.citation.titleNANOTECHNOLOGY-
dc.citation.volume23-
dc.citation.number25-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000305174500008-
dc.identifier.scopusid2-s2.0-84861881593-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusCHANGE MEMORY-
dc.subject.keywordPlusBLOCK-COPOLYMERS-
dc.subject.keywordPlusLITHOGRAPHY-
dc.subject.keywordPlusARRAYS-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusGRAPHOEPITAXY-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusAREA-
dc.subject.keywordAuthorchalcogenide-
dc.subject.keywordAuthorIn3Sb1Te2-
dc.subject.keywordAuthorphase change nanoarray-
dc.subject.keywordAuthorGFR flexible substrate-
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KIST Article > 2012
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