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dc.contributor.authorKim, BongSoo-
dc.contributor.authorChoi, Seong Ho-
dc.contributor.authorZhu, X. -Y.-
dc.contributor.authorFrisbie, C. Daniel-
dc.date.accessioned2024-01-20T15:34:56Z-
dc.date.available2024-01-20T15:34:56Z-
dc.date.created2021-09-04-
dc.date.issued2011-12-14-
dc.identifier.issn0002-7863-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/129719-
dc.description.abstractThe tunneling resistance and electronic structure of metal-molecule-metal junctions based onoligoacene (benzene, naphthalene, anthracene, and tetracene) thiol and dithiol molecules were measured and correlated using conducting probe atomic force microscopy (CP-AFM) in conjunction with ultraviolet photoelectron spectroscopy (UPS). Nanoscopic tunnel junctions (similar to 10 nm(2)) were formed by contacting oligoacene self-assembled monolayers (SAMs) on flat Ag, Au, or Pt substrates with metalized AFM tips (Ag, Au, or Pt). The low bias (<0.2 V) junction resistance (R) increased exponentially with molecular length (s), i.e., R = R-0 exp(beta s), where R-0 is the contact resistance and is the tunneling attenuation factor. The R-0 values for oligoacene dithiols were 2 orders of magnitude less than those of oligoacene thiols. Likewise, the beta value was 0.5 per ring (0.2 angstrom(-1)) for the dithiol series and 1.0 per ring (0.5 angstrom(-1)) for the monothiol series, demonstrating that beta is not simply a characteristic of the molecular backbone but is strongly affected by the number of chemical (metal-S) contacts. R-0 decreased strongly as the contact work function (Phi) increased for both monothiol and dithiol junctions, whereas 0 was independent of 4:1) within error. This divergent behavior was explained in terms of the metal-S bond dipoles and the electronic structure of the junction; namely, p is independent of contact type because of weak Fermi level pinning (UPS revealed E-F - E-HOMO varied only weakly with Phi), but R-0 varies strongly with contact type because of the strong metal S bond dipoles that are responsible for the Fermi level pinning. A previously published triple barrier model for molecular junctions was invoked to rationalize these results in which R-0 is determined by the contact barriers, which are proportional to the size of the interfacial bond dipoles, and 0 is determined by the bridge barrier, E-F - E-HOMO. Current-voltage (I - V) characteristics obtained over a larger voltage range 0-1 V revealed a characteristic transition voltage V-trans, at which the current increased more sharply with voltage. V-trans., values were generally >0.5 V and were well correlated with the bridge barrier E-F - E-HOMO. Overall, the combination of electronic structure determination by UPS with length- and work function-dependent transport measurements provides a remarkably comprehensive picture of tunneling transport in molecular junctions based on oligoacenes.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectSELF-ASSEMBLED MONOLAYERS-
dc.subjectSINGLE-ELECTRON TRANSISTOR-
dc.subjectFERMI-LEVEL ALIGNMENT-
dc.subjectLENGTH DEPENDENCE-
dc.subjectCONDUCTANCE-
dc.subjectTRANSPORT-
dc.subjectRESISTANCE-
dc.subject1ST-PRINCIPLES-
dc.subjectALKANETHIOLS-
dc.subjectLINKER-
dc.titleMolecular Tunnel Junctions Based on pi-Conjugated Oligoacene Thiols and Dithiols between Ag, Au, and Pt Contacts: Effect of Surface Linking Group and Metal Work Function-
dc.typeArticle-
dc.identifier.doi10.1021/ja207751w-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.133, no.49, pp.19864 - 19877-
dc.citation.titleJOURNAL OF THE AMERICAN CHEMICAL SOCIETY-
dc.citation.volume133-
dc.citation.number49-
dc.citation.startPage19864-
dc.citation.endPage19877-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000298719800054-
dc.identifier.scopusid2-s2.0-83055197048-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalResearchAreaChemistry-
dc.type.docTypeArticle-
dc.subject.keywordPlusSELF-ASSEMBLED MONOLAYERS-
dc.subject.keywordPlusSINGLE-ELECTRON TRANSISTOR-
dc.subject.keywordPlusFERMI-LEVEL ALIGNMENT-
dc.subject.keywordPlusLENGTH DEPENDENCE-
dc.subject.keywordPlusCONDUCTANCE-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusRESISTANCE-
dc.subject.keywordPlus1ST-PRINCIPLES-
dc.subject.keywordPlusALKANETHIOLS-
dc.subject.keywordPlusLINKER-
dc.subject.keywordAuthorMolecular electronics-
dc.subject.keywordAuthortunneling-
dc.subject.keywordAuthorcontact effect-
dc.subject.keywordAuthorlinking group-
dc.subject.keywordAuthormetal work function-
dc.subject.keywordAuthorconjugated molecules-
dc.subject.keywordAuthorthiol-
dc.subject.keywordAuthordithol-
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