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dc.contributor.authorPark, Seung-Chul-
dc.contributor.authorHan, Ii Ki-
dc.date.accessioned2024-01-20T16:02:58Z-
dc.date.available2024-01-20T16:02:58Z-
dc.date.created2021-09-04-
dc.date.issued2011-11-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/129864-
dc.description.abstractJunction temperature of In As quantum-dot laser diodes (LDs) with different geometric dimensions is analyzed by using a finite-element method for the purpose of high-optical-power application. In particular, we found that the junction temperature of LDs epi-up mounted on a Cu sub-mount changed significantly depending on the LD chip width. The junction temperature at 1.5 W in the CW mode was reduced from about 500 K to 350 K when the LD chip width was widened from 50 mu m to 500 mu m.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectOPERATION-
dc.titleJunction Temperature Simulation of In As Quantum dot Laser Diodes for High Optical Power-
dc.typeArticle-
dc.identifier.doi10.3938/jkps.59.3146-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.5, pp.3146 - 3149-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume59-
dc.citation.number5-
dc.citation.startPage3146-
dc.citation.endPage3149-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART001602688-
dc.identifier.wosid000297038400035-
dc.identifier.scopusid2-s2.0-85124703258-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusOPERATION-
dc.subject.keywordAuthorLaser diodes-
dc.subject.keywordAuthorJunction temperature-
dc.subject.keywordAuthorQuantum dot-
dc.subject.keywordAuthorFinite-element method-
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