Deposition of Nanocrystalline Bi2Te3 Films Using a Modified MOCVD System

Abstract

Nanocrystalline Bi2Te3 films were deposited on (100) GaAs substrates using a modified metalorganic chemical vapor deposition (MOCVD) system, and the effect of growth parameters on the structural properties were investigated. The modified MOCVD system employed a mixing room for the formation of nanoparticles of Bi2Te3 by gas-phase reaction and a graphite susceptor for growth of nanoparticles on the substrate. The grown films contained many crystallites of nanosize, and large crystallites consisted of small particles a few tens of nanometer in size. This nanostructured film approach can be an economical way of producing high-performance thermoelectric films with nanostructure compared with other top-down methods.