Observation of negative differential transconductance in tunneling emitter bipolar transistors

Abstract

We report on measurement of negative differential transconductance (NDTC) of iron (Fe)/magnesium-oxide (MgO)/silicon tunneling emitter NPN bipolar transistors. Device simulations reveal that the NDTC is a consequence of an inversion layer at the tunneling-oxide/P-silicon interface for low base voltages. Electrons travel laterally through the inversion layer into the base and give rise to an increase in collector current. The NDTC results from the recombination of those electrons at the interface between emitter and base contact which is dependent on the base voltage. For larger base voltages, the inversion layer disappears marking the onset of normal bipolar transistor behavior.