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dc.contributor.authorSon, Dong-Ick-
dc.contributor.authorPark, Dong-Hee-
dc.contributor.authorIe, Sang-Yub-
dc.contributor.authorChoi, Won-Kook-
dc.contributor.authorChoi, Ji-Won-
dc.contributor.authorLi, Fushan-
dc.contributor.authorKim, Tae-Whan-
dc.date.accessioned2024-01-20T22:32:59Z-
dc.date.available2024-01-20T22:32:59Z-
dc.date.created2021-09-03-
dc.date.issued2008-10-01-
dc.identifier.issn0957-4484-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/133064-
dc.description.abstractWe demonstrate hybrid polymer-quantum dot dual-function devices with a single active-layer structure consisting of CdSe/ZnS semiconductor quantum dots dispersed with poly N-vinylcarbazole (PVK) and 1,3,5-tirs-(N-phenylbenzimidazol-2-yl) benzene (TPBi) fabricated on an indium-tin-oxide (ITO)/glass substrate by using a simple spin-coating technique. The dual-function devices are composed of light-emitting diodes (LED) on the top side and nonvolatile organic bistable memory devices (OBD) on the bottom side and can show electroluminescence (EL) along with electrical bistability concurrently. Both the functionality of LEDs and OBDs can be successfully achieved by adding an electron transport layer (ETL) TPBi to the OBD to attain an LED in which the lowest unoccupied molecular orbital (LUMO) level of TPBi is positioned at the energy level between the conduction band of CdSe/ZnS and the LiF/Al electrode. Through transmission electron microscopy (TEM) study, it is revealed that CdSe/ZnS QDs distributed on the interface of the hole transport layer (HTL) and ETL significantly take part in the electroluminescence process rather than those existing at the outer surface of the ETL.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectLIGHT-EMITTING-DIODES-
dc.subjectELECTROLUMINESCENCE-
dc.subjectNANOCRYSTALS-
dc.subjectMEMORY-
dc.subjectBISTABILITY-
dc.subjectMECHANISM-
dc.subjectSYSTEM-
dc.titleSingle active-layer structured dual-function devices using hybrid polymer-quantum dots-
dc.typeArticle-
dc.identifier.doi10.1088/0957-4484/19/39/395201-
dc.description.journalClass1-
dc.identifier.bibliographicCitationNANOTECHNOLOGY, v.19, no.39-
dc.citation.titleNANOTECHNOLOGY-
dc.citation.volume19-
dc.citation.number39-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000258538800004-
dc.identifier.scopusid2-s2.0-51349095971-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusELECTROLUMINESCENCE-
dc.subject.keywordPlusNANOCRYSTALS-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusBISTABILITY-
dc.subject.keywordPlusMECHANISM-
dc.subject.keywordPlusSYSTEM-
dc.subject.keywordAuthorsingle active layer-
dc.subject.keywordAuthorpolymer-nanoparticle composite-
dc.subject.keywordAuthorOrganic bistable device-
dc.subject.keywordAuthorLED-
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KIST Article > 2008
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