Ferromagnetism and metal-semiconducting transition in Fe-doped ZnO thin films

Abstract

We report the room temperature ferromagnetism and a metal-semiconductor transition at 227 K in 200 MeV Ag15+-ion irradiated thin films of Fe-implanted ZnO. The single phase nature of Fe-doped ZnO after ion irradiation is confirmed by x-ray diffraction. Magneto-resistance measurements show spin polarization below 150 K. X-ray absorption spectroscopy and x-ray magnetic circular dichroism studies at room temperature reveal that Fe is oxidized in a mixed valence (Fe2+ and Fe3+) state and the magnetic signal is due to the Fe2+ state. The observations are explained on the basis of the combined effect of carrier doping by Fe3+ and oxygen vacancies.