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dc.contributor.authorHwang, Sung Ho-
dc.contributor.authorSong, Jin Dong-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorLee, Jung Il-
dc.date.accessioned2024-01-20T23:31:14Z-
dc.date.available2024-01-20T23:31:14Z-
dc.date.created2021-09-03-
dc.date.issued2008-05-
dc.identifier.issn1745-1353-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/133537-
dc.description.abstractDevice characteristics of In0.5Ga0.5As/GaAs quantum dot infrared detector (QDIP) have been enhanced with hydrogen plasma treatment. After the hydrogen (H) plasma treatment, the dark currents were noticeably decreased and photoluminescence (PL) intensity was increased by H-passivation of interfacial traps between quantum dots and GaAs and of non-radiative defect centers caused during QD growths. Photo response, which could not be observed in as-grown QDIP due to large dark currents which obscured the photocurrent signal, was measured successfully after H-treatment due to H-passivation.-
dc.languageEnglish-
dc.publisherIEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG-
dc.subjectMOLECULAR-BEAM EPITAXY-
dc.subjectPOLYSILICON MOSFETS-
dc.subjectPASSIVATION-
dc.subjectPHOTOLUMINESCENCE-
dc.subjectPHOTODETECTOR-
dc.subjectLASERS-
dc.titleEnhanced characteristics of In0.5Ga0.5As quantum dot infrared photo detectoir with hydrogen plasma treatment-
dc.typeArticle-
dc.identifier.doi10.1093/ietele/e91-c.5.699-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEICE TRANSACTIONS ON ELECTRONICS, v.E91C, no.5, pp.699 - 702-
dc.citation.titleIEICE TRANSACTIONS ON ELECTRONICS-
dc.citation.volumeE91C-
dc.citation.number5-
dc.citation.startPage699-
dc.citation.endPage702-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000256861500006-
dc.identifier.scopusid2-s2.0-77953596339-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalResearchAreaEngineering-
dc.type.docTypeArticle-
dc.subject.keywordPlusMOLECULAR-BEAM EPITAXY-
dc.subject.keywordPlusPOLYSILICON MOSFETS-
dc.subject.keywordPlusPASSIVATION-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusPHOTODETECTOR-
dc.subject.keywordPlusLASERS-
dc.subject.keywordAuthorquantum dot infrared photodetector-
dc.subject.keywordAuthorhydrogen passivation-
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