DSpace at KISTKIST Article2008

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dc.contributor.authorSuyoun Lee-
dc.contributor.authorJeung-hyun Jeong-
dc.contributor.authorByung-ki Cheong-
dc.date.accessioned2024-01-20T23:34:15Z-
dc.date.available2024-01-20T23:34:15Z-
dc.date.created2022-01-10-
dc.date.issued2008-03-
dc.identifier.issn1598-1657-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/133682-
dc.description.abstractThe present status of technical development of a highly scalable, high-speed non-volatile PCM is overviewed. Major technical challenges are described along with solutions that are being pursued in terms of innovative device structures and fabrication technologies, new phase change materials, and new memory schemes.-
dc.languageEnglish-
dc.publisher대한전자공학회-
dc.titleOverview of the Current Status of Technical Development for a Highly Scalable, High-Speed, Non-Volatile Phase-Change Memory-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.8, no.1, pp.1 - 10-
dc.citation.titleJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.citation.volume8-
dc.citation.number1-
dc.citation.startPage1-
dc.citation.endPage10-
dc.description.journalRegisteredClasskci-
dc.description.journalRegisteredClassother-
dc.identifier.kciidART001233134-
dc.subject.keywordAuthorNon-volatile-
dc.subject.keywordAuthorphase-change memory-
dc.subject.keywordAuthorphase-change material-
dc.subject.keywordAuthorscalability-
dc.subject.keywordAuthordevice speed-
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