Comments on the high temperature oxidation characteristics of Ti3SiC2 in air
- Authors
- Nguyen, Thuan Dinh; Choi, Jung-Ho; Park, Sang-Whan; Lee, Dong-Bok
- Issue Date
- 2007-12
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH, INC
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH, v.8, no.6, pp.397 - 401
- Abstract
- The high temperature oxidation characteristics of Ti3SiC2 have been studied extensively before. However, we believe that there are still the ambiguous points concerning the scale structure and oxidation mechanism of Ti3SiC2. Hence, the oxide scales formed, the distribution and roles of Ti, Si and C in the scale, and the oxidation mechanism are discussed based on the results obtain from this and previous studies. In this study, Ti3SiC2 compounds were produced via a powder metallurgical process, oxidized between 900 and 1200 degrees C in air for up to 100 h, and the oxidation characteristics are discussed.
- Keywords
- BEHAVIOR; COMPOSITES; RESISTANCE; STABILITY; SI; BEHAVIOR; COMPOSITES; RESISTANCE; STABILITY; SI; Ti3SiC2; titanium; silicon; carbon; oxidation
- ISSN
- 1229-9162
- URI
- https://pubs.kist.re.kr/handle/201004/133921
- Appears in Collections:
- KIST Article > 2007
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