DSpace at KIST: InAs/GaAs 자발형성 양자점을 기반으로 하는 나노광소자

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DC Field	Value	Language
dc.contributor.author	최원준	-
dc.date.accessioned	2024-01-21T00:30:58Z	-
dc.date.available	2024-01-21T00:30:58Z	-
dc.date.created	2022-01-10	-
dc.date.issued	2007-10	-
dc.identifier.issn	1226-7945	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/134055	-
dc.language	Korean	-
dc.publisher	한국전기전자재료학회	-
dc.title	InAs/GaAs 자발형성 양자점을 기반으로 하는 나노광소자	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	전기전자재료학회논문지, v.20, no.10, pp.29 - 40	-
dc.citation.title	전기전자재료학회논문지	-
dc.citation.volume	20	-
dc.citation.number	10	-
dc.citation.startPage	29	-
dc.citation.endPage	40	-
dc.description.isOpenAccess	N	-
dc.description.journalRegisteredClass	kci	-
dc.subject.keywordAuthor	양자점	-
dc.subject.keywordAuthor	화합물반도체	-
dc.subject.keywordAuthor	나노광소자	-

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