High speed phase change random access memory with (Ge1Sb2Te4)(0.9)(Sn1Bi2Te4)(0.1) complete solid solution

Abstract

We investigated structures and phase transformation kinetics of (Ge1Sb2Te4)(0.9)(Sn1Bi2Te4)(0.1) alloy mixture and its application for the phase change random access memory device. As-sputtered (Ge1Sb2Te4)(0.9)(Sn1Bi2Te4)(0.1) thin film forms crystalline fee phase. Meanwhile, we could obtain amorphous RESET state and crystalline SET state reproducibly by using appropriate voltage pulse conditions in device structure. We demonstrate that the minimum time for SET operation of phase change random access memory device with (Ge1Sb2Te4)(0.9)(Sn1Bi2Te4)(0.1) goes down to 20ns, which is much smaller than 100ns for device with Ge1Sb2Te4. The accelerated SET operation of the device with (Ge1Sb2Te4)(0.9)(Sn1Bi2Te4)(0.1) is interpreted to originate from reduced bond strength in comparison to pure Ge1Sb2Te4.