Asymmetric intermixing in a Co-Al thin film system: An investigation using coaxial impact collision ion scattering spectroscopy

Authors
Hwang, H. M.Park, J. Y.Jung, S. K.Lee, J.Whang, C. N.Kim, S.-P.Lee, S.-C.Lee, K-R.Chung, Y.-C.
Issue Date
2007-05-01
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.101, no.9
Abstract
Surface structure evolution during atomic deposition in a Co-Al system was investigated using coaxial impact collision ion scattering spectroscopy (CAICISS). Half monolayer of Al and Co atoms were deposited on Co(0001) and Al(001) single crystal surfaces, respectively, in an ultrahigh-vacuum environment. CAICISS analysis of the deposited surface revealed an asymmetric interfacial reaction, as predicted by previous molecular dynamics simulations. Al atoms deposited on a Co substrate are placed on the surface with no interatomic intermixing. In contrast, significant surface intermixing with the deposited Co atoms occurs on the Al(001) substrate, resulting in the formation of a CoAl intermetallic surface layer of B2 structure. These asymmetric features would be important to the understanding of the structural evolution of thin film multilayers. (c) 2007 American Institute of Physics.
Keywords
MOLECULAR-DYNAMICS SIMULATION; MAGNETIC TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; ATOMIC-STRUCTURE; SURFACE; INTERFACE; GROWTH; LAYER; X-1); MOLECULAR-DYNAMICS SIMULATION; MAGNETIC TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; ATOMIC-STRUCTURE; SURFACE; INTERFACE; GROWTH; LAYER; X-1); interface; simulation; MD; asymmetric structure
ISSN
0021-8979
URI
https://pubs.kist.re.kr/handle/201004/134399
DOI
10.1063/1.2730562
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KIST Article > 2007
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