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dc.contributor.authorKim, Tae-Young-
dc.contributor.authorLee, Churl Seung-
dc.contributor.authorLee, Young Jin-
dc.contributor.authorLee, Kwang-Ryeol-
dc.date.accessioned2024-01-21T01:34:40Z-
dc.date.available2024-01-21T01:34:40Z-
dc.date.created2021-09-05-
dc.date.issued2007-01-15-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/134736-
dc.description.abstractTetrahedral amorphous carbon (ta-C) film was prepared by the filtered vacuum arc process with Ar background gas. The residual compressive stress of the film decreased significantly as the Ar flow rate increased, whereas negligible change in the mechanical properties was observed. Structure analysis by Raman spectroscopy, near edge x-ray absorption fine structure, and electron spin resonance spectra revealed a close relationship between the residual compressive stress and the bond distortion that invokes paramagnetic defects or unpaired pi electrons. These results demonstrate that the stress reduction can occur by relaxation of the distorted or twisted atomic bonds at the same fraction of sp(3) hybridized bonds, which enhances the stability of the ta-C coating without deterioration in the advantageous properties. The effect of Ar background gas is discussed in terms of the increased ion population of low kinetic energy in the plasma beam. (c) 2007 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectABSORPTION FINE-STRUCTURE-
dc.subjectDIAMOND-
dc.subjectSUBSTRATE-
dc.titleReduction of the residual compressive stress of tetrahedral amorphous carbon film by Ar background gas during the filtered vacuum arc process-
dc.typeArticle-
dc.identifier.doi10.1063/1.2408385-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.101, no.2-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume101-
dc.citation.number2-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000243890800030-
dc.identifier.scopusid2-s2.0-33847729470-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusABSORPTION FINE-STRUCTURE-
dc.subject.keywordPlusDIAMOND-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordAuthorta-C-
dc.subject.keywordAuthorstress-
dc.subject.keywordAuthorAr-
dc.subject.keywordAuthoratomic stress-
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