Optical properties of Er-doped GaN

Abstract

Optical properties of Er (Erbium)-doped GaN epilayers have been investigated using photoluminescence (PL). Various doses of Er ions were implanted on GaN epilayers by ion implantation. Sharp visible green emission lines due to inner 4f shell transitions for Er3+ were observed from the PL spectrum of Er-implanted GaN. The emission spectrum consists of two narrow green lines at 537 and 558 nm. The green emission lines are identified as Er3+ transitions from the H-5(11/2) and S-4(3/2) levels to the I-4(15/2) ground state. The stronger peaks in the 5 x 10(14) cm(-2) sample, together with the relatively higher intensity of the Er3+ luminescence in the lower doped sample, imply that some damage remains in the 1 x 10(15) cm(-2) sample. The peak positions of emission lines due to inner 4f shell transitions for Er3+ do not change with increasing temperature. This indicates that Er3+ related emission depends very little on the ambient temperature.