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dc.contributor.authorShon, Yoon-
dc.contributor.authorJeon, H. C.-
dc.contributor.authorLee, Sejoon-
dc.contributor.authorLee, S. -W.-
dc.contributor.authorKim, D. Y.-
dc.contributor.authorKang, T. W.-
dc.contributor.authorKim, Eun Kyu-
dc.contributor.authorYoon, Chong S.-
dc.contributor.authorKim, C. K.-
dc.contributor.authorPark, Y. J.-
dc.contributor.authorKim, Yongmin-
dc.contributor.authorBaik, J. M.-
dc.contributor.authorLee, J. L.-
dc.date.accessioned2024-01-21T01:36:23Z-
dc.date.available2024-01-21T01:36:23Z-
dc.date.created2021-09-04-
dc.date.issued2006-12-29-
dc.identifier.issn0022-0248-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/134807-
dc.description.abstractThe samples with the Mn concentrations of 0.290% and 0.062% revealed that both in the calculated diffraction pattern and experimental pattern of transmission electron microscopy (TEM), the FCC lattice was still maintained after the Mn doping. The regularly spaced spots of ordered Mn produce the anomalous Hall effect (AHE) showing the characteristics of diluted magnetic semiconductor, which is caused by hole-mediated ferromagnetism due to the increase of hole concentration in tetrahedrally coordinated semiconductor. Ferrornagnetic semiconductor of T-c between 100 and 200 K demonstrated by TEM and AHE can be formed in diluted magnetic semiconductor based on InMnP:Zn epilayers additionally co-doped with Zn. (c) 2006 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.subjectDILUTED MAGNETIC SEMICONDUCTOR-
dc.subjectNEUTRAL MANGANESE ACCEPTOR-
dc.subjectROOM-TEMPERATURE-
dc.subjectFERROMAGNETISM-
dc.titleEnhanced Curie temperature persisting between 100 and 200 K (similar to 50 K by theory) with Mn (similar to 0.290%) based on InMnP : Zn-
dc.typeArticle-
dc.identifier.doi10.1016/j.jcrysgro.2006.10.133-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF CRYSTAL GROWTH, v.297, no.2, pp.289 - 293-
dc.citation.titleJOURNAL OF CRYSTAL GROWTH-
dc.citation.volume297-
dc.citation.number2-
dc.citation.startPage289-
dc.citation.endPage293-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000243812100005-
dc.identifier.scopusid2-s2.0-33845596540-
dc.relation.journalWebOfScienceCategoryCrystallography-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaCrystallography-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusDILUTED MAGNETIC SEMICONDUCTOR-
dc.subject.keywordPlusNEUTRAL MANGANESE ACCEPTOR-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusFERROMAGNETISM-
dc.subject.keywordAuthormetalorganic chemical vapor deposition-
dc.subject.keywordAuthormolecular beam epitaxy-
dc.subject.keywordAuthormagnetic materials-
dc.subject.keywordAuthorsemiconducting indium phosphide-
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