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dc.contributor.authorPark, Yu Jin-
dc.contributor.authorLee, Jeong Yong-
dc.contributor.authorKim, Yong Tae-
dc.date.accessioned2024-01-21T02:03:21Z-
dc.date.available2024-01-21T02:03:21Z-
dc.date.created2021-09-01-
dc.date.issued2006-11-15-
dc.identifier.issn0169-4332-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/134950-
dc.description.abstractThe atomic arrangement and grain growth of the hexagonal structured Ge2Sb2Te5 were investigated by a transmission electron microscopy study. Unlike the isotropic crystallization of face-centered-cubic (fcc) structured Ge2Sb2Te5, the hexagonal structured Ge2Sb2Te5 grain was preferably grown to a large degree with a specific direction. As a result, we have revealed that the grain growth occurred parallel to the (0001) plane, and identified the atomic arrangement of the hexagonal structured Ge2Sb2Te5 having nine cyclic layers by analyzing the high-resolution transmission electron microscopy images and simulated images obtained in the direction of < 1120 > zone axis. (c) 2006 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectTHIN-FILMS-
dc.subjectRESISTANCE MEASUREMENTS-
dc.subjectMETASTABLE GE2SB2TE5-
dc.subjectPHASE-TRANSITIONS-
dc.subjectCRYSTALLIZATION-
dc.subjectDIFFRACTION-
dc.subjectMEMORY-
dc.titleA transmission electron microscopy study on the atomic arrangement and grain growth of hexagonal structured Ge2Sb2Te5-
dc.typeArticle-
dc.identifier.doi10.1016/j.apsusc.2005.12.158-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED SURFACE SCIENCE, v.253, no.2, pp.714 - 719-
dc.citation.titleAPPLIED SURFACE SCIENCE-
dc.citation.volume253-
dc.citation.number2-
dc.citation.startPage714-
dc.citation.endPage719-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000242647800051-
dc.identifier.scopusid2-s2.0-33845399366-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryMaterials Science, Coatings & Films-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusRESISTANCE MEASUREMENTS-
dc.subject.keywordPlusMETASTABLE GE2SB2TE5-
dc.subject.keywordPlusPHASE-TRANSITIONS-
dc.subject.keywordPlusCRYSTALLIZATION-
dc.subject.keywordPlusDIFFRACTION-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordAuthorGe2Sb2Te5-
dc.subject.keywordAuthortransmission electron microscopy-
dc.subject.keywordAuthoratomic arrangement-
dc.subject.keywordAuthorgrain growth-
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