Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, Tae Yun | - |
dc.contributor.author | Park, Jae Hong | - |
dc.contributor.author | Kim, Yong Bum | - |
dc.contributor.author | Yoon, Dae Sung | - |
dc.contributor.author | Cheon, Chae Il | - |
dc.contributor.author | Lee, Hong Lim | - |
dc.contributor.author | Kim, Tae Song | - |
dc.date.accessioned | 2024-01-21T02:05:32Z | - |
dc.date.available | 2024-01-21T02:05:32Z | - |
dc.date.created | 2021-09-01 | - |
dc.date.issued | 2006-10-01 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/135038 | - |
dc.description.abstract | A newly designed lead zirconate titanate (PZT) solid solution 0.1 Pb(Zn0.5W0.5)O-3-0.9Pb(Zr0.5Ti0.5)O-3 was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO2/SiNx/Si-substrate through the screen printing method. A conventional screen printing thick film and a hybrid thick film (screen printing and PZT sol infiltration) was also compared. According to an SEM study, the prepared thick film showed a much denser microstructure with the sol infiltration method. The electrical properties of the prepared PZT solid solution and its thick film were predominantly realized in a low temperature region. The dielectric constant of a conventional screen printing thick film and the hybrid thick film (sintered at 900 degrees C), was 703.5 and 911.3, respectively. (c) 2006 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER | - |
dc.subject | LEAD-ZIRCONATE-TITANATE | - |
dc.subject | CERAMICS | - |
dc.subject | SILICON | - |
dc.title | Preparation of piezoelectric 0.1Pb(Zn0.5W0.5)O-3-0.9Pb(Zr0.5Ti0.5)O-3 solid solution and thick films for low temperature firing on a Si-substrate | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2006.07.005 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.295, no.2, pp.172 - 178 | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 295 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 172 | - |
dc.citation.endPage | 178 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000241716800014 | - |
dc.identifier.scopusid | 2-s2.0-33748962664 | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LEAD-ZIRCONATE-TITANATE | - |
dc.subject.keywordPlus | CERAMICS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordAuthor | polycrystalline deposition | - |
dc.subject.keywordAuthor | perovskites | - |
dc.subject.keywordAuthor | dielectric materials | - |
dc.subject.keywordAuthor | piezoelectric materials | - |
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