높은 열처리 온도를 갖는 GOI 웨이퍼의 직접접합

Abstract

A direct wafer bonding process necessary for GaAs-on-insulator (GOI) fabrication with high thermal annealing temperatures was studied by using PECVD oxides between gallium arsenide and silicon wafers. In order to apply some uniform pressure on initially-bonded wafer pairs, a graphite sample holder was used for wafer bonding. Also, a tool for measuring the tensile forces was fabricated to measure the wafer bonding strengths of both initially-bonded and thermally-annealed samples. GaAs/SiO2/Si wafers with 0.5-m-thick PECVD oxides were annealed from 100 ℃ to 600 ℃. Maximum bonding strengths of about 84 N were obtained in the annealing temperature range of 400 500 ℃. The bonded wafers were not separated up to 600 ℃. As a result, the GOI wafers with high annealing temperatures were demonstrated for the first time.