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dc.contributor.author김병국-
dc.contributor.author문주호-
dc.contributor.author김주선-
dc.contributor.author이해원-
dc.contributor.author이종호-
dc.contributor.author손지원-
dc.contributor.author김광년-
dc.date.accessioned2024-01-21T04:31:40Z-
dc.date.available2024-01-21T04:31:40Z-
dc.date.created2021-09-06-
dc.date.issued2005-09-
dc.identifier.issn1229-7801-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/136161-
dc.description.abstractIn order to find a proper buffering material which can prohibit an unwanted interfacial reaction between anode and electrolyte of LSGM-based SOFC, we examined a gadolinium doped ceria and scandium doped zirconia as a candidate. For this examination, we investigated the microstructural and phase stability of the interface under different buffering layer conditions. According to the investigation, ceria based material induced a serious La diffusion out of the LSGM electrolyte resulted in the formation of very resistive LaSrGa3O7 phase at the interface. On the other hand zirconia based material was directly reacted with LSGM electrolyte and thus produced very resistive reaction products such as La2Zr2O7, Sr2ZrO4, LaSrGaO4 and LaSrGa3O7. From this study we found that an improper buffering material induced the higher internal cell resistance rather than an interfacial stability.-
dc.languageKorean-
dc.publisher한국세라믹학회-
dc.titleLSGM계 고체산화물 연료전지의 계면안정성을 위한 완충층의 도입-
dc.title.alternativeIntrduction of a Buffering Layer for the Interfacial Stability of LSGM-Based SOFCs-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국세라믹학회지, v.42, no.9, pp.637 - 644-
dc.citation.title한국세라믹학회지-
dc.citation.volume42-
dc.citation.number9-
dc.citation.startPage637-
dc.citation.endPage644-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART000971544-
dc.subject.keywordAuthorSOFC-
dc.subject.keywordAuthorLSGM-
dc.subject.keywordAuthorGDC-
dc.subject.keywordAuthorScSZ-
dc.subject.keywordAuthorBuffering layer-
dc.subject.keywordAuthorInterfacial reaction-
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KIST Article > 2005
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