DSpace at KISTKIST Article2005

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dc.contributor.authorHong, J-
dc.contributor.authorRhie, K-
dc.contributor.authorShin, KH-
dc.contributor.authorKim, KH-
dc.contributor.authorKim, SU-
dc.contributor.authorLee, BC-
dc.date.accessioned2024-01-21T04:37:21Z-
dc.date.available2024-01-21T04:37:21Z-
dc.date.created2021-09-03-
dc.date.issued2005-08-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/136269-
dc.description.abstractWe have obtained large positive and negative magnetoresistance in a square-shaped InAs two-dimensional electron gas in which the magnetoresistance is controlled by the magnetization of a ferromagnetic gate on the surface of the device. From an analysis based on a numerical calculation, the mechanism of this effect can be understood in terms of a spatially varying Hall conductivity and a geometrical effect of the device. This device has several practical advantages over the device with extraordinary magnetoresistance reported by Solin et al.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectROOM-TEMPERATURE-
dc.subjectTRANSPORT-
dc.subjectELECTRONS-
dc.subjectFIELD-
dc.titleLarge magnetoresistance in square-shaped hybrid magnet-semiconductor device-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.47, no.2, pp.354 - 358-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume47-
dc.citation.number2-
dc.citation.startPage354-
dc.citation.endPage358-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART001195333-
dc.identifier.wosid000231226400033-
dc.identifier.scopusid2-s2.0-24644452537-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusELECTRONS-
dc.subject.keywordPlusFIELD-
dc.subject.keywordAuthormagnetoresistance-
dc.subject.keywordAuthor2DEG-
dc.subject.keywordAuthorInAs-
dc.subject.keywordAuthorHall angle-
dc.subject.keywordAuthormagnetic sensor-
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