Co-doped TiO2 nanowire electric field-effect transistors fabricated by suspended molecular template method

Abstract

We report on the fabrication of Co 3.4 at. % doped TiO2 nanowire-based field-effect transistors with a back gate of heavily doped Si substrate and their electric field-effect functions. The TiO2 : Co nanowire, which was fabricated utilizing a conventional magnetron sputtering technique on a suspended molecular template between electrodes, is a polycrystalline and consists of a chain of nanoparticles on a molecular template. The N-type field-effect transistors prepared from the suspended Co-TiO2 nanowire junction were exhibited on currents, transconductances, and a mobility of up to 0.1 mA/mum, 0.2 muA/V, and mu(e) approximate to 66 cm(2)/V s, respectively, at room temperature. The unique structure of these inorganic-organic functional devices may enable the fabrication of flexible nanoelectrospin devices. (C) 2005 American Institute of Physics.