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dc.contributor.authorSong, JD-
dc.contributor.authorPark, YM-
dc.contributor.authorShin, JC-
dc.contributor.authorLim, JG-
dc.contributor.authorPark, YJ-
dc.contributor.authorChoi, WJ-
dc.contributor.authorHan, IK-
dc.contributor.authorLee, JI-
dc.contributor.authorKim, HS-
dc.contributor.authorPark, CG-
dc.date.accessioned2024-01-21T06:10:33Z-
dc.date.available2024-01-21T06:10:33Z-
dc.date.created2021-09-04-
dc.date.issued2004-10-15-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137135-
dc.description.abstractWe compared the structural and optical properties of InAs/GaAs quantum dots grown by migration enhanced epitaxy, with and without arsenic, during indium deposition. The uniformity and size of the quantum dots are enhanced in a sample without arsenic. As a result, narrower and longer wavelength photoluminescence is observed in this sample. Furthermore, the thickness of the wetting layers is reduced by similar to20% in the sample without arsenic, and this result agrees well with the speculation that metallic indium has a smaller driving force for corrugating the InAs wetting layers before they are transformed from two-dimensional to three-dimensional layers. Additionally, the photoluminescence linewidth of the sample without arsenic is insensitive to the cryostat temperature due to two major factors: the reduced thickness of the wetting layers and the enhanced uniformity. In the sample with arsenic, however, the photoluminescence linewidth shows typical anomalies. (C) 2004 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectLASERS-
dc.titleInfluence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy-
dc.typeArticle-
dc.identifier.doi10.1063/1.1794902-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.96, no.8, pp.4122 - 4125-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume96-
dc.citation.number8-
dc.citation.startPage4122-
dc.citation.endPage4125-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000224277800013-
dc.identifier.scopusid2-s2.0-7644222624-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusLASERS-
dc.subject.keywordAuthorquantum dots-
dc.subject.keywordAuthorMEE-
dc.subject.keywordAuthorwetting layer-
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KIST Article > 2004
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