DSpace at KISTKIST Article2004

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dc.contributor.author이응래-
dc.contributor.author오정근-
dc.contributor.author이형규-
dc.contributor.author주병권-
dc.contributor.author김남수-
dc.date.accessioned2024-01-21T06:36:28Z-
dc.date.available2024-01-21T06:36:28Z-
dc.date.created2022-01-10-
dc.date.issued2004-08-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137328-
dc.titleCharacteristics of Latch-up Current of the Dual Gate Emitter Switched Thyristor-
dc.title.alternativeDual Gate Emitter Switched Thyristor의 Latch-up 전류 특성-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation전기전자재료학회논문지, v.17, no.8, pp.799 - 805-
dc.citation.title전기전자재료학회논문지-
dc.citation.volume17-
dc.citation.number8-
dc.citation.startPage799-
dc.citation.endPage805-
dc.subject.keywordAuthorDG-EST-
dc.subject.keywordAuthorLatch-up current-
dc.subject.keywordAuthorON-state voltage drop-
dc.subject.keywordAuthorNon-planer p-base-
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KIST Article > 2004
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