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dc.contributor.authorJeong, WC-
dc.contributor.authorKim, HJ-
dc.contributor.authorPark, JH-
dc.contributor.authorJeong, CW-
dc.contributor.authorLee, EY-
dc.contributor.authorOh, JH-
dc.contributor.authorJeong, GT-
dc.contributor.authorKoh, GH-
dc.contributor.authorKoo, HC-
dc.contributor.authorLee, SH-
dc.contributor.authorLee, SY-
dc.contributor.authorShin, JM-
dc.contributor.authorJeong, HS-
dc.contributor.authorKim, K-
dc.date.accessioned2024-01-21T06:44:21Z-
dc.date.available2024-01-21T06:44:21Z-
dc.date.created2021-09-01-
dc.date.issued2004-07-
dc.identifier.issn0018-9464-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137473-
dc.description.abstractA new reference signal generation method for high-density MRAM is reported. 0.4 x 0.8 mum(2) magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-mum CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R-H and low-resistance state R-L regardless of applied voltage. When tested in 8 x 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleA new reference signal generation method for MRAM using a 90-degree rotated MTJ-
dc.typeArticle-
dc.identifier.doi10.1109/TMAG.2004.829328-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON MAGNETICS, v.40, no.4, pp.2628 - 2630-
dc.citation.titleIEEE TRANSACTIONS ON MAGNETICS-
dc.citation.volume40-
dc.citation.number4-
dc.citation.startPage2628-
dc.citation.endPage2630-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000223446700208-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordAuthormagnetic tunnel junction (MTJ)-
dc.subject.keywordAuthormagnetic random access memory (MRAM)-
dc.subject.keywordAuthorreference cell-
dc.subject.keywordAuthortunneling magnetoresistance (TMR)-
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