DSpace at KIST: The defect-related photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 films

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The defect-related photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 films

Authors: Son, JH; Kim, HB; Whang, CN; Chae, KH

Issue Date: 2004-06-30

Publisher: ELSEVIER

Citation: APPLIED SURFACE SCIENCE, v.233, no.1-4, pp.288 - 293

Abstract: We have studied the photoluminescence characteristics associated with the defects produced by Si+ ion-beam mixing of SiO2/ Si/SiO2 films. The photoluminescence peaks show a strong dependence on annealing process before ion-beam mixing. Using electron spin resonance and X-ray photoelectron spectroscopy, the relationship between the photoluminescence peaks and the defects is discussed. (C) 2004 Elsevier B.V. All rights reserved.

Keywords: VISIBLE PHOTOLUMINESCENCE; SILICON NANOCRYSTALS; ROOM-TEMPERATURE; LUMINESCENCE; IMPLANTATION; EMISSION; DIOXIDE; BLUE; VISIBLE PHOTOLUMINESCENCE; SILICON NANOCRYSTALS; ROOM-TEMPERATURE; LUMINESCENCE; IMPLANTATION; EMISSION; DIOXIDE; BLUE; ion-beam mixing; photoluminescence; radiative defects

ISSN: 0169-4332

URI: https://pubs.kist.re.kr/handle/201004/137477

DOI: 10.1016/j.apsusc.2004.03.234

Appears in Collections:: KIST Article > 2004

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