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dc.contributor.authorShon, Y-
dc.contributor.authorLee, WC-
dc.contributor.authorPark, YS-
dc.contributor.authorKwon, YH-
dc.contributor.authorLee, SJ-
dc.contributor.authorChung, KJ-
dc.contributor.authorKim, HS-
dc.contributor.authorKim, DY-
dc.contributor.authorFu, DJ-
dc.contributor.authorKang, TW-
dc.contributor.authorFan, XJ-
dc.contributor.authorPark, YJ-
dc.contributor.authorOh, HT-
dc.date.accessioned2024-01-21T07:14:50Z-
dc.date.available2024-01-21T07:14:50Z-
dc.date.created2021-09-02-
dc.date.issued2004-03-29-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137752-
dc.description.abstractUnintentionally doped bulk InP was prepared by the liquid encapsulated Czochralski method and subsequently implanted with various. doses of Mn+.. The properties of Mn+-implanted InP:Mn were investigated by various measurements. The results of energy dispersive x-ray peaks displayed injected concentrations of Mn of 0.8% and 8.8%, respectively. The results of photoluminescence (PL) measurement showed that optical broad transitions related to Mn appeared near 1.089, 1.144, and 1.185 eV in samples with various doses of Mn+. It was confirmed that the photoluminescence peaks near. 1.089, 1.144; and 1.185 eV were Mn-correlated PL bands by the implantation of Mn: Ferromagnetic hysteresis loops measured at 10 K were observed and. the temperature-dependent magnetization showed ferromagnetic behavior around 90 K, which almost agreed with. the theoretical prediction (T-c similar to 70 K). (C) 2004 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectP-TYPE GAN-
dc.subjectEPILAYERS-
dc.subjectIONS-
dc.titleMn-implanted dilute magnetic semiconductor InP : Mn-
dc.typeArticle-
dc.identifier.doi10.1063/1.1690875-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.84, no.13, pp.2310 - 2312-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume84-
dc.citation.number13-
dc.citation.startPage2310-
dc.citation.endPage2312-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000220591500030-
dc.identifier.scopusid2-s2.0-11144355730-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusP-TYPE GAN-
dc.subject.keywordPlusEPILAYERS-
dc.subject.keywordPlusIONS-
dc.subject.keywordAuthordiluted magnetic semiconductor-
dc.subject.keywordAuthorMn-implantation-
dc.subject.keywordAuthorcurie temperature-
dc.subject.keywordAuthorSQUID-
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