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dc.contributor.authorBae, SY-
dc.contributor.authorChoi, HS-
dc.contributor.authorChoi, SY-
dc.contributor.authorOh, YJ-
dc.date.accessioned2024-01-21T13:13:56Z-
dc.date.available2024-01-21T13:13:56Z-
dc.date.created2021-09-04-
dc.date.issued2000-11-
dc.identifier.issn0272-8842-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/140993-
dc.description.abstractHigh quality epitaxial thin films of t-ZrO2, were fabricated on Si(100) wafers via sol-gel processing. The thin films exhibited high epitaxial quality (FWHM similar to 0.3 degrees) and excellent surface morphology (rms roughness similar to 14 Angstrom); thus, they are expected to be very useful as epitaxial buffer layers. (C) 2000 Elsevier Science Ltd and Techna S.r.l. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCI LTD-
dc.subjectZIRCONIUM DIOXIDE FILMS-
dc.subjectSILICON-
dc.titleSol-gel processing for epitaxial growth of ZrO2 thin films on Si(100) wafers-
dc.typeArticle-
dc.identifier.doi10.1016/S0272-8842(99)00043-7-
dc.description.journalClass1-
dc.identifier.bibliographicCitationCERAMICS INTERNATIONAL, v.26, no.2, pp.213 - 214-
dc.citation.titleCERAMICS INTERNATIONAL-
dc.citation.volume26-
dc.citation.number2-
dc.citation.startPage213-
dc.citation.endPage214-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000085220900016-
dc.identifier.scopusid2-s2.0-0033896642-
dc.relation.journalWebOfScienceCategoryMaterials Science, Ceramics-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusZIRCONIUM DIOXIDE FILMS-
dc.subject.keywordPlusSILICON-
dc.subject.keywordAuthorsol-gel-
dc.subject.keywordAuthorepitaxial growth-
dc.subject.keywordAuthorZrO2 thin films-
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