DSpace at KIST: Dependence of the intermixing of an InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate during the growth of a SiN//x capping layer

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DC Field	Value	Language
dc.contributor.author	최원준	-
dc.contributor.author	이희택	-
dc.contributor.author	우덕하	-
dc.contributor.author	김선호	-
dc.contributor.author	조재원	-
dc.date.accessioned	2024-01-21T14:05:59Z	-
dc.date.available	2024-01-21T14:05:59Z	-
dc.date.created	2022-01-10	-
dc.date.issued	2000-05	-
dc.identifier.issn	0374-4914	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/141399	-
dc.publisher	한국물리학회	-
dc.title	Dependence of the intermixing of an InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate during the growth of a SiN//x capping layer	-
dc.title.alternative	SiNx 덮개층 성장 시 NH₃ 가스 유량비에 의존하는 InGaAs/InGaAsP 양자우물의 IFVD 공정	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	새물리, v.40, no.4, pp.349 - 352	-
dc.citation.title	새물리	-
dc.citation.volume	40	-
dc.citation.number	4	-
dc.citation.startPage	349	-
dc.citation.endPage	352	-
dc.subject.keywordAuthor	quantum well intermixing	-

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