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dc.contributor.authorJung, SK-
dc.contributor.authorHwang, SW-
dc.contributor.authorAhn, D-
dc.contributor.authorPark, JH-
dc.contributor.authorKim, Y-
dc.contributor.authorKim, EK-
dc.date.accessioned2024-01-21T14:07:49Z-
dc.date.available2024-01-21T14:07:49Z-
dc.date.created2021-09-05-
dc.date.issued2000-05-
dc.identifier.issn1386-9477-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/141432-
dc.description.abstractWe report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current-voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot. (C) 2000 Elsevier Science B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.subjectSTATES-
dc.titleFabrication of quantum dot transistors incorporating a single self-assembled quantum dot-
dc.typeArticle-
dc.identifier.doi10.1016/S1386-9477(99)00355-0-
dc.description.journalClass1-
dc.identifier.bibliographicCitationPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.7, no.3-4, pp.430 - 434-
dc.citation.titlePHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES-
dc.citation.volume7-
dc.citation.number3-4-
dc.citation.startPage430-
dc.citation.endPage434-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000087358100027-
dc.identifier.scopusid2-s2.0-0033723057-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusSTATES-
dc.subject.keywordAuthorself-assembled quantum dot-
dc.subject.keywordAuthorquantum dot transistor-
dc.subject.keywordAuthorInAs-
dc.subject.keywordAuthortransport-
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KIST Article > 2000
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