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dc.contributor.authorWoo, DH-
dc.contributor.authorOh, MS-
dc.contributor.authorKoh, EH-
dc.contributor.authorYahng, JS-
dc.contributor.authorKim, SH-
dc.contributor.authorKim, YD-
dc.date.accessioned2024-01-21T14:07:52Z-
dc.date.available2024-01-21T14:07:52Z-
dc.date.created2021-09-05-
dc.date.issued2000-05-
dc.identifier.issn0167-9317-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/141433-
dc.description.abstractWe have carried out a double-crystal X-ray diffraction (DCXRD) study on ternary In1-xGaxAs/InP and quaternary In1-xGaxAsyP1-y/InP strained multi-quantum well (MQW) structures on (001) InP substrates grown by chemical beam epitaxy. The presence of well-defined higher-order harmonics in the DCXRD results and also the presence of intense and sharp peaks in the low- and room-temperature photoluminescence measurements confirm the high quality of strained MQW structures. This is further supported by the observation of defect-foe interfaces in transmission electron microscope photographs. By comparing the DCXRD measurements with X-ray simulation results, we could obtain layer thicknesses and profiles of perpendicular strains relative to the InP barrier. (C) 2000 Elsevier Science B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectX-RAY-DIFFRACTION-
dc.subjectINTRINSIC STRAIN-
dc.subjectSUPERLATTICES-
dc.subjectCBE-
dc.subjectINTERFACES-
dc.titleStrained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy-
dc.typeArticle-
dc.identifier.doi10.1016/S0167-9317(99)00470-0-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMICROELECTRONIC ENGINEERING, v.51-2, pp.171 - 179-
dc.citation.titleMICROELECTRONIC ENGINEERING-
dc.citation.volume51-2-
dc.citation.startPage171-
dc.citation.endPage179-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000087431500023-
dc.identifier.scopusid2-s2.0-0033703062-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusX-RAY-DIFFRACTION-
dc.subject.keywordPlusINTRINSIC STRAIN-
dc.subject.keywordPlusSUPERLATTICES-
dc.subject.keywordPlusCBE-
dc.subject.keywordPlusINTERFACES-
dc.subject.keywordAuthorstrained layer-
dc.subject.keywordAuthorInGaAsP-
dc.subject.keywordAuthorCBE-
dc.subject.keywordAuthorDCXRD-
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