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dc.contributor.authorYi, HT-
dc.contributor.authorCho, J-
dc.contributor.authorChoi, WJ-
dc.contributor.authorWoo, DH-
dc.contributor.authorKim, SH-
dc.contributor.authorKang, KN-
dc.date.accessioned2024-01-21T14:08:09Z-
dc.date.available2024-01-21T14:08:09Z-
dc.date.created2021-09-04-
dc.date.issued2000-05-
dc.identifier.issn0261-8028-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/141438-
dc.languageEnglish-
dc.publisherKLUWER ACADEMIC PUBL-
dc.subjectFREE VACANCY DIFFUSION-
dc.subjectSUPERLATTICE-
dc.titleDependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers-
dc.typeArticle-
dc.identifier.doi10.1023/A:1006716910637-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS SCIENCE LETTERS, v.19, no.10, pp.835 - 836-
dc.citation.titleJOURNAL OF MATERIALS SCIENCE LETTERS-
dc.citation.volume19-
dc.citation.number10-
dc.citation.startPage835-
dc.citation.endPage836-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000086678000004-
dc.identifier.scopusid2-s2.0-0033733859-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusFREE VACANCY DIFFUSION-
dc.subject.keywordPlusSUPERLATTICE-
dc.subject.keywordAuthorquantum well intermixing-
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KIST Article > 2000
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