Microstructural and electrical property studies of Pb(Zr0.52Ti0.48)O-3 films grown on p-InP (100) substrates by a radio-frequency magnetron-sputtering technique at low temperature

Abstract

Pb(Zr0.52Ti0.48)O-3 thin films were grown on p-InP (100) substrates by using radio-frequency magnetron-sputtering at a relatively low temperature (similar to 450 degrees C), X-ray diffraction measurements showed that the Pb(Zr0.52Ti0.48)O-3 film layers grown on the InP substrates were polycrystalline, and Auger electron spectroscopy measurements indicated that the compositions of the as-grown films consisted of lead, zirconium, titanium, and oxygen, Transmission electron microscopy measurements showed that the grown Pb(Zr0.52Ti0.48)O-3 was a polycrystalllne layer with small domains and that the Pb(Zr0.52Ti0.48)O-3/InP (100) heterointerface had no significant interdiffusion problem, Room-temperature current-voltage and capacitance-voltage (C-V) measurements clearly revealed a metal-insulator-semiconductor behavior for the Pb(Zr0.52Ti0.48)O-3 insulator gates, and the interface state densities at the Pb(Zr0.52Ti0.48)O-3/p-InP interfaces, as determined from the C-V measurements, were approximately low 10(11) eV(-1) cm(-2) at an energy of about 0.6 eV below the conduction-band edge, The dielectric constant of the Pb(Zr0.52Ti0.48)O-3 thin film, as determined from the C-V measurements, was as large as 907.2. These results indicate that the Pb(Zr0.52Ti0.48)O-3 layers grown on p-InP (100) substrates at low temperatures hold promise for potential high-density nonvolatile memories and high-speed infrared sensors based on InP substrates.