Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Ju, Eunkyo | - |
dc.contributor.author | Madarang, May Angelu | - |
dc.contributor.author | Kim, Yeonhwa | - |
dc.contributor.author | Chu, Rafael Jumar | - |
dc.contributor.author | Laryn, Tsimafei | - |
dc.contributor.author | Kim, Younghyun | - |
dc.contributor.author | Kim, Inho | - |
dc.contributor.author | Kim, Tae Soo | - |
dc.contributor.author | Jeon, Sunghan | - |
dc.contributor.author | Lee, In-Hwan | - |
dc.contributor.author | Han, Jae-Hoon | - |
dc.contributor.author | Choi, Won Jun | - |
dc.contributor.author | Jung, Daehwan | - |
dc.date.accessioned | 2024-06-28T07:30:16Z | - |
dc.date.available | 2024-06-28T07:30:16Z | - |
dc.date.created | 2024-06-28 | - |
dc.date.issued | 2024-07 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/150140 | - |
dc.description.abstract | Monolithically integrated III-V/Si multijunction solar cells are promising for highly reliable, scalable, and efficient photovoltaic cells. However, growth of III-V materials at high temperatures degrades the open-circuit voltage of Si subcells primarily due to reduced Si bulk minority carrier lifetimes. Here, we report a systematic study of open-circuit voltage improvements from 0.505 to 0.539 V in 2 mu m thick GaAs layer-filtered Si subcells by employing SiO2/SiNx protection layers during III-V molecular beam epitaxy (MBE) growth and by serving them as surface passivation. Cells with the protection layers exhibit a Si bulk minority carrier lifetime of 180 mu s after III-V MBE growth, which is about 9 times higher than those (21 mu s) without protection layers. A 1.65 eV, Al0.18Ga0.82As buffer-filtered Si subcell reveals 0.548 V and is compared with those of previous III-V/Si tandem studies. This study presents a practical approach to realizing high-performance Si subcells for monolithically integrated high-efficiency III-V/Si tandem solar cells. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Improving the Open-Circuit Voltage of III-V Layer-Filtered Si Subcells for Monolithic III-V/Si Tandem Solar Cells | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsaem.4c00924 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | ACS Applied Energy Materials, v.7, no.13, pp.5501 - 5507 | - |
dc.citation.title | ACS Applied Energy Materials | - |
dc.citation.volume | 7 | - |
dc.citation.number | 13 | - |
dc.citation.startPage | 5501 | - |
dc.citation.endPage | 5507 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 001248629100001 | - |
dc.identifier.scopusid | 2-s2.0-85196386774 | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SILICON BULK LIFETIME | - |
dc.subject.keywordPlus | ENVIRONMENT | - |
dc.subject.keywordAuthor | III-V/Si tandem cell | - |
dc.subject.keywordAuthor | epitaxial growth | - |
dc.subject.keywordAuthor | Si subcell | - |
dc.subject.keywordAuthor | pyramid texturing | - |
dc.subject.keywordAuthor | minority carrierlifetime | - |
dc.subject.keywordAuthor | SiO2/SiNx protection layers | - |
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