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dc.contributor.authorJu, Eunkyo-
dc.contributor.authorMadarang, May Angelu-
dc.contributor.authorKim, Yeonhwa-
dc.contributor.authorChu, Rafael Jumar-
dc.contributor.authorLaryn, Tsimafei-
dc.contributor.authorKim, Younghyun-
dc.contributor.authorKim, Inho-
dc.contributor.authorKim, Tae Soo-
dc.contributor.authorJeon, Sunghan-
dc.contributor.authorLee, In-Hwan-
dc.contributor.authorHan, Jae-Hoon-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorJung, Daehwan-
dc.date.accessioned2024-06-28T07:30:16Z-
dc.date.available2024-06-28T07:30:16Z-
dc.date.created2024-06-28-
dc.date.issued2024-07-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/150140-
dc.description.abstractMonolithically integrated III-V/Si multijunction solar cells are promising for highly reliable, scalable, and efficient photovoltaic cells. However, growth of III-V materials at high temperatures degrades the open-circuit voltage of Si subcells primarily due to reduced Si bulk minority carrier lifetimes. Here, we report a systematic study of open-circuit voltage improvements from 0.505 to 0.539 V in 2 mu m thick GaAs layer-filtered Si subcells by employing SiO2/SiNx protection layers during III-V molecular beam epitaxy (MBE) growth and by serving them as surface passivation. Cells with the protection layers exhibit a Si bulk minority carrier lifetime of 180 mu s after III-V MBE growth, which is about 9 times higher than those (21 mu s) without protection layers. A 1.65 eV, Al0.18Ga0.82As buffer-filtered Si subcell reveals 0.548 V and is compared with those of previous III-V/Si tandem studies. This study presents a practical approach to realizing high-performance Si subcells for monolithically integrated high-efficiency III-V/Si tandem solar cells.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleImproving the Open-Circuit Voltage of III-V Layer-Filtered Si Subcells for Monolithic III-V/Si Tandem Solar Cells-
dc.typeArticle-
dc.identifier.doi10.1021/acsaem.4c00924-
dc.description.journalClass1-
dc.identifier.bibliographicCitationACS Applied Energy Materials, v.7, no.13, pp.5501 - 5507-
dc.citation.titleACS Applied Energy Materials-
dc.citation.volume7-
dc.citation.number13-
dc.citation.startPage5501-
dc.citation.endPage5507-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid001248629100001-
dc.identifier.scopusid2-s2.0-85196386774-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryEnergy & Fuels-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaEnergy & Fuels-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusSILICON BULK LIFETIME-
dc.subject.keywordPlusENVIRONMENT-
dc.subject.keywordAuthorIII-V/Si tandem cell-
dc.subject.keywordAuthorepitaxial growth-
dc.subject.keywordAuthorSi subcell-
dc.subject.keywordAuthorpyramid texturing-
dc.subject.keywordAuthorminority carrierlifetime-
dc.subject.keywordAuthorSiO2/SiNx protection layers-
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