The phosphorous-doped 2D nanosheet assembled 3D Mn2V2O7 microflowers on Ni foam as a binder-free electrode for high energy density asymmetric supercapacitor application

Authors
Rajalakshmi, KanagarajYesuraj, JohnboscoMuthusamy, SelvarajSelvam, N. Clament SagayaNam, Yun SikKim, KibumXu, Yuanguo
Issue Date
2024-10
Publisher
Elsevier BV
Citation
Journal of Energy Storage, v.99
Abstract
In recent times, transition-metal oxides have been recognized as highly promising candidates for supercapacitor applications. Nevertheless, their progress in diverse fields has been hindered by challenges such as poor electrical conductivity and a shortage of active reaction centers. Doping heteroatoms would overcome these drawbacks and enhance the supercapacitor properties in transition metal oxides. Herein, the phosphorous-doped 2D nanosheet assembled 3D Mn2V2O7 micro flowers were grown on the Nickel foam using the hydrothermal method and successively phosphatized in a tube furnace, which was utilized as a binder-free supercapacitor electrode. The synthesis process involved varying the concentration of phosphorus (P), resulting in the successful formation of uniform P-decorated Mn2V2O7 microflowers. The unique microflower structure and doping P into the Mn2V2O7 material enhance the electrochemical properties with a specific capacity of 850C g?1 (1545 F g?1) at 1 A g?1 in a three-electrode cell. Moreover, the assembled Mn2V2O7?600/NF//AC device delivers a specific capacity of 258C g?1 (211 F g?1) at 1 A g?1 with a remarkable rate of 47 % at a high current density of 20 Ag ?1. The device achieved a maximum energy density of 43.2 Wh kg?1 at a power density of 604.7 W kg?1, and it maintained 91 % of initial capacity after 10,000 charge/discharge cycles at 20 A g?1. These results suggest that the P-doping 2D nanosheet assembled 3D Mn2V2O7 could be promising electrode materials for supercapacitor applications.
Keywords
LAYERED DOUBLE HYDROXIDE; ASSISTED SYNTHESIS; FACILE SYNTHESIS; OXIDE; FABRICATION; P-doping; Binder-free; Supercapacitor; Asymmetric device
ISSN
2352-152X
URI
https://pubs.kist.re.kr/handle/201004/150466
DOI
10.1016/j.est.2024.113424
Appears in Collections:
KIST Article > 2024
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