Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Yun, Jung Min | - |
dc.contributor.author | Park, Min Ho | - |
dc.contributor.author | Kim, Yu Bin | - |
dc.contributor.author | Choi, Min Jung | - |
dc.contributor.author | Kim, Seunghwan | - |
dc.contributor.author | Yi, Yeonjin | - |
dc.contributor.author | Park, Soohyung | - |
dc.contributor.author | Kang, Seong Jun | - |
dc.date.accessioned | 2024-11-07T02:00:42Z | - |
dc.date.available | 2024-11-07T02:00:42Z | - |
dc.date.created | 2024-11-06 | - |
dc.date.issued | 2024-10 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/150993 | - |
dc.description.abstract | One of the major challenges in QLED research is improving the stability of the devices. In this study, we fabricated all inorganic quantum-dot light emitting diodes (QLEDs) using hafnium oxide (HfOx) as the hole transport layer (HTL), a material commonly used for insulator. Oxygen vacancies in HfOx create defect states below the Fermi level, providing a pathway for hole injection. The concentration of these oxygen vacancies can be controlled by the annealing temperature. We optimized the all-inorganic QLEDs with HfOx as the HTL by changing the annealing temperature. The optimized QLEDs with HfOx as the HTL showed a maximum luminance and current efficiency of 66,258 cd/m2 and 9.7 cd/A, respectively. The fabricated all-inorganic QLEDs exhibited remarkable stability, particularly when compared to devices using organic materials for the HTL. Under extended storage in ambient conditions, the all-inorganic device demonstrated a significantly enhanced operating lifetime (T50) of 5.5 h, which is 11 times longer than that of QLEDs using an organic HTL. These results indicate that the all-inorganic QLEDs structure, with ITO/MoO3/HfOx/QDs/ZnMgO/Al, exhibits superior stability compared to organic-inorganic hybrid QLEDs. | - |
dc.language | English | - |
dc.publisher | MDPI Open Access Publishing | - |
dc.title | Improvement of the Stability of Quantum-Dot Light Emitting Diodes Using Inorganic HfOx Hole Transport Layer | - |
dc.type | Article | - |
dc.identifier.doi | 10.3390/ma17194739 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | Materials, v.17, no.19 | - |
dc.citation.title | Materials | - |
dc.citation.volume | 17 | - |
dc.citation.number | 19 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 001334108100001 | - |
dc.identifier.scopusid | 2-s2.0-85206486536 | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | HIGHLY EFFICIENT | - |
dc.subject.keywordAuthor | QLEDs | - |
dc.subject.keywordAuthor | all-inorganic device | - |
dc.subject.keywordAuthor | quantum dots | - |
dc.subject.keywordAuthor | stable | - |
dc.subject.keywordAuthor | oxygen vacancies | - |
dc.subject.keywordAuthor | optoelectronics | - |
dc.subject.keywordAuthor | solution process | - |
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