DSpace at KISTKIST Patent2024

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dc.contributor.author장호성-
dc.contributor.author홍윤건-
dc.contributor.author고형덕-
dc.contributor.author김종민-
dc.contributor.author조소혜-
dc.contributor.author이승용-
dc.contributor.author강구민-
dc.date.accessioned2025-05-16T21:30:26Z-
dc.date.available2025-05-16T21:30:26Z-
dc.date.issued2025-05-02-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/152432-
dc.title고효율 비 Cd 계 양자점 및 그 제조 방법-
dc.typePatent-
dc.date.registration2025-05-02-
dc.date.application2024-01-22-
dc.identifier.patentRegistrationNumber10-2805220-
dc.identifier.patentApplicationNumber10-2024-0009316-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2024
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