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dc.contributor.authorChoi, Jongbum-
dc.contributor.authorSeong, Hanwool-
dc.contributor.authorChoi, Won-Young-
dc.contributor.authorNoh, Su-Jung-
dc.contributor.authorLee, Ji-Sung-
dc.contributor.authorLee, Han-Saem-
dc.contributor.authorKim, Young-Chan-
dc.contributor.authorLee, Ouk Jae-
dc.contributor.authorMin, Byoung Chul-
dc.contributor.authorKwon, Joon-Hyun-
dc.contributor.authorHan, Dong-Soo-
dc.date.accessioned2025-11-06T09:32:38Z-
dc.date.available2025-11-06T09:32:38Z-
dc.date.created2025-11-04-
dc.date.issued2025-11-
dc.identifier.issn1530-437X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/153417-
dc.description.abstractThe demand for advanced magnetic field sensors is growing rapidly due to the increased need for precise navigation and positioning systems in autonomous vehicles and automation. While conventional magnetoresistive (MR) sensors offer several advantages, their narrow dynamic range and complex manufacturing limit their applicability. In contrast, spin Hall effect (SHE) magnetic sensors have emerged as a promising alternative with several advantages. However, limitations in signal amplification and the unavoidable dc offset problem still remain a challenge. To address this, we propose a novel design featuring Wheatstone bridge structures that enable signal amplification through structural engineering and operation method utilizing ac current source with a dc bias current that enables us to dynamically control the dc offset, providing precise calibration and optimized performance. This innovative approach leverages the unique properties of the SHE to deliver a robust, high-performance magnetic field sensing solution.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleSpin Hall Magnetic Sensors With Dynamic Offset Calibration and Structurally Tunable Sensitivity-
dc.typeArticle-
dc.identifier.doi10.1109/jsen.2025.3609856-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE Sensors Journal, v.25, no.21, pp.39605 - 39611-
dc.citation.titleIEEE Sensors Journal-
dc.citation.volume25-
dc.citation.number21-
dc.citation.startPage39605-
dc.citation.endPage39611-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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KIST Article > 2025
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