Correction: The leakage current suppression mechanism in a RuO2/SrTiO3/Ru capacitor induced by introduction of an ultra-thin GeO2 interfacial layer at the bottom interface

Abstract

Correction for ‘The leakage current suppression mechanism in a RuO2/SrTiO3/Ru capacitor induced by introduction of an ultra-thin GeO2 interfacial layer at the bottom interface’ by Heewon Paik et al., J. Mater. Chem. C, 2025, https://doi.org/10.1039/d5tc02736e.

The authors regret that in the Results and discussion section, incorrect binding energy values were quoted in the discussion of Fig. S4 (please note that Fig. S4 itself is not affected). The following text:

“In the STO sample, the TiO2−x component (∼528.0 eV) accounted for a larger fraction of the Ti 2p spectrum than in b-Ge-STO, and its relative area decreased systematically with increasing tilting angle. In contrast, the Ti 2p spectra of b-Ge-STO are dominated by the TiO2 component (∼528.4 eV), with the TiO2−x contribution remaining low and essentially invariant when the tilting angle is changed.”

should be replaced with:

“In the STO sample, the TiO2−x component (∼458.0 eV) accounted for a larger fraction of the Ti 2p spectrum than in b-Ge-STO, and its relative area decreased systematically with increasing tilting angle. In contrast, the Ti 2p spectra of b-Ge-STO are dominated by the TiO2 component (∼458.4 eV), with the TiO2−x contribution remaining low and essentially invariant when the tilting angle is changed.”

This text error does not affect the data, interpretation, or conclusions of the study.

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.