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Issue DateTitleAuthor(s)
199301The properties of the quantum wires grown on V-grooved Al//0//.//3Ga//0//.//7As/GaAs substrate at atmospheric pressure metalorganic chemical vapor deposition.김성일; 김무성; 민석기; 이민석; 김용; 김영덕; 남산
199101Characterization for GaAs/AlGaAs superlattice grown by LPMOCVD.김성일; 민석기; 김용; 김무성; 엄경숙; 조훈영
199301LPMOCVD 방법에 의한 탄소도핑된 갈륨비소 에피층의 격자 수축 및 임계두께 해석 .김성일; 김무성; 민석기
199301Fabrication of single GaAs substrate by MOCVD.김성일; 민석기; 김용; 김무성; 이민석; 김영덕
198701Theoretical calculations on absorption, emission and gain spectra in AlGaAs active layer of the visible DH laser diode.김성일; 민석기; 엄경숙; 김무성
199401The electrical and optical characteristics of carbon doped GaAs epilayers grown by MOCVD.김성일; 민석기; 김용; 김무성
198905Photoquenching effect and thermal recovery process for midgap levels in GaAs : An EL2 family in GaAs.김은규; 조훈형; 민석기
200007Fabrication of noble quantum wire structures grown by low pressure MOCVD using selective area epitaxy김성일; 김제원; 박영균; 김용태
199401The temperature dependence of the electrical properties of carbon doped GaAs.김성일; 민석기; 김용; 김무성
199101Fabrication of HEMT employing delta-doping layer grown by MOCVD.김성일; 민석기; 김용; 김무성; 엄경숙; 김현수