Full metadata record
DC Field | Value | Language |
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dc.contributor.author | 전대영 | - |
dc.contributor.author | 박지민 | - |
dc.contributor.author | Park, So Jeong | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.date.accessioned | 2024-01-12T02:32:15Z | - |
dc.date.available | 2024-01-12T02:32:15Z | - |
dc.date.created | 2023-02-24 | - |
dc.date.issued | 2023-02 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/75804 | - |
dc.description.abstract | Junctionless transistors are suitable for sub-3 nm applications because of their extremely simple structure and high electrical performance, which compensate for short-channel effects. Two-dimensional semiconductor transition-metal dichalcogenide materials, such as MoS2, may also resolve technical and fundamental issues for Si-based technology. Here, we present the first junctionless electric-double-layer field-effect transistor with an electrostatically highly doped 5 nm thick MoS2 channel. A double-gated MoS2 transistor with an ionic-liquid top gate and a conventional bottom gate demonstrated good transfer characteristics with a 104 on?off current ratio, a 70 mV dec?1 subthreshold swing at a 0 V bottom-gate bias, and drain-current versus top-gate-voltage characteristics were shifted left significantly with increasing bottom-gate bias due to an electrostatically increased overall charge carrier concentration in the MoS2 channel. When a bottom-gate bias of 80 V was applied, a shoulder and two clear peak features were identified in the transconductance and its derivative, respectively; this outcome is typical of Si-based junctionless transistors. Furthermore, the decrease in electron mobility induced by a transverse electric field was reduced with increasing bottom-gate bias. Numerical simulations and analytical models were used to support these findings, which clarify the operation of junctionless MoS2 transistors with an electrostatically highly doped channel. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.title | Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.2c19596 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | ACS Applied Materials & Interfaces, v.15, no.6, pp.8298 - 8304 | - |
dc.citation.title | ACS Applied Materials & Interfaces | - |
dc.citation.volume | 15 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 8298 | - |
dc.citation.endPage | 8304 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000928494100001 | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | NANOWIRE TRANSISTORS | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | NOISE | - |
dc.subject.keywordAuthor | junctionless transistors | - |
dc.subject.keywordAuthor | two-dimensional semiconductor transition-metal dichalcogenide | - |
dc.subject.keywordAuthor | double-gated MoS2 transistor | - |
dc.subject.keywordAuthor | ionic-liquid gate | - |
dc.subject.keywordAuthor | electrostatically highly doped channel | - |
dc.subject.keywordAuthor | shoulder feature in transconductance | - |
dc.subject.keywordAuthor | two peaks in transconductance derivative | - |
dc.subject.keywordAuthor | reduced mobility degradation | - |
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