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dc.contributor.author전대영-
dc.contributor.author박지민-
dc.contributor.authorPark, So Jeong-
dc.contributor.authorKim, Gyu-Tae-
dc.date.accessioned2024-01-12T02:32:15Z-
dc.date.available2024-01-12T02:32:15Z-
dc.date.created2023-02-24-
dc.date.issued2023-02-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/75804-
dc.description.abstractJunctionless transistors are suitable for sub-3 nm applications because of their extremely simple structure and high electrical performance, which compensate for short-channel effects. Two-dimensional semiconductor transition-metal dichalcogenide materials, such as MoS2, may also resolve technical and fundamental issues for Si-based technology. Here, we present the first junctionless electric-double-layer field-effect transistor with an electrostatically highly doped 5 nm thick MoS2 channel. A double-gated MoS2 transistor with an ionic-liquid top gate and a conventional bottom gate demonstrated good transfer characteristics with a 104 on?off current ratio, a 70 mV dec?1 subthreshold swing at a 0 V bottom-gate bias, and drain-current versus top-gate-voltage characteristics were shifted left significantly with increasing bottom-gate bias due to an electrostatically increased overall charge carrier concentration in the MoS2 channel. When a bottom-gate bias of 80 V was applied, a shoulder and two clear peak features were identified in the transconductance and its derivative, respectively; this outcome is typical of Si-based junctionless transistors. Furthermore, the decrease in electron mobility induced by a transverse electric field was reduced with increasing bottom-gate bias. Numerical simulations and analytical models were used to support these findings, which clarify the operation of junctionless MoS2 transistors with an electrostatically highly doped channel.-
dc.languageEnglish-
dc.publisherAmerican Chemical Society-
dc.titleJunctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel-
dc.typeArticle-
dc.identifier.doi10.1021/acsami.2c19596-
dc.description.journalClass1-
dc.identifier.bibliographicCitationACS Applied Materials & Interfaces, v.15, no.6, pp.8298 - 8304-
dc.citation.titleACS Applied Materials & Interfaces-
dc.citation.volume15-
dc.citation.number6-
dc.citation.startPage8298-
dc.citation.endPage8304-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000928494100001-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusNANOWIRE TRANSISTORS-
dc.subject.keywordPlusGATE-
dc.subject.keywordPlusNOISE-
dc.subject.keywordAuthorjunctionless transistors-
dc.subject.keywordAuthortwo-dimensional semiconductor transition-metal dichalcogenide-
dc.subject.keywordAuthordouble-gated MoS2 transistor-
dc.subject.keywordAuthorionic-liquid gate-
dc.subject.keywordAuthorelectrostatically highly doped channel-
dc.subject.keywordAuthorshoulder feature in transconductance-
dc.subject.keywordAuthortwo peaks in transconductance derivative-
dc.subject.keywordAuthorreduced mobility degradation-
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