Ambipolar Characteristics Based on Complementary MoS2 and WSe2 Field-Effect Transistors

Abstract

Recently, semiconducting two-dimensional (2D) transition metal dichalcogenide (TMD) material-based field-effect transistors (FETs) were studied actively to overcome the short channel effects (SCEs), which are fundamental issues in scaling of logic transistors for the continuation of Moore’s law [1,2]. In this work, complementary MoS2 and WSe2 FETs were fabricated by selective patterning with alignment technique. WSe2 and MoS2 channels were placed on highly doped-Si/SiO2 substrate using mechanical exfoliation and dry transfer method to utilize p- and n-type channel, respectively. Then, we successfully obtained ambipolar transfer curves from the complementary MoS2 and WSe2 FETs. In addition, Id-Vd and Id -Vg characteristics of each polarity transistor were analyzed to verify the ambipolar operation and several advantages of the complementary FETs. This work can provide useful information of structure design to investigate proper electrical operation of 2D material-based ambipolar transistors.