Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim Taeyueb | - |
dc.contributor.author | Park, HeeGyum | - |
dc.contributor.author | Han, Ki-Hyuk | - |
dc.contributor.author | Nah, Young-Jun | - |
dc.contributor.author | 구현철 | - |
dc.contributor.author | 민병철 | - |
dc.contributor.author | 홍석민 | - |
dc.contributor.author | Lee, Ouk Jae | - |
dc.date.accessioned | 2024-01-12T03:01:32Z | - |
dc.date.available | 2024-01-12T03:01:32Z | - |
dc.date.created | 2022-08-04 | - |
dc.date.issued | 2022-07 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/76666 | - |
dc.identifier.uri | https://aip.scitation.org/doi/full/10.1063/5.0090577 | - |
dc.description.abstract | A binary stochastic neuron (BSN) or a probabilistic bit (p-bit) randomly fluctuates between digitized "0" and "1" with a controllable functionality of time-averaged value. Such an unconventional bit is the most essential building block for the recently proposed stochastic neural networks and probabilistic computing. Here, we experimentally implement a magnetic tunnel junction (MTJ) for BSN, with relaxation times on the order of tens of milliseconds that can be modulated by a current-induced spin-transfer torque. The NIST Statistical Test Suite (800-22a) is used to verify true random number generation by the BSN-MTJ device. Our results suggest the possibility of using the artificial BSN MTJ device in neuromorphic applications as well as in a recently proposed probabilistic computing. (c) 2022 Author(s). | - |
dc.language | English | - |
dc.publisher | American Institute of Physics Inc. | - |
dc.title | Demonstration of in-plane magnetized stochastic magnetic tunnel junction for binary stochastic neuron | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/5.0090577 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | AIP Advances, v.12, no.7, pp.1 - 6 | - |
dc.citation.title | AIP Advances | - |
dc.citation.volume | 12 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000884502800008 | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
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