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dc.contributor.authorJimin Park-
dc.contributor.authorPark Chang Seon-
dc.contributor.authorJangyup Son-
dc.contributor.authorJUNG WON JUN-
dc.contributor.authorMin Park-
dc.contributor.authorDong Su Lee-
dc.contributor.authorDae-Young Jeon-
dc.date.accessioned2024-01-12T03:43:25Z-
dc.date.available2024-01-12T03:43:25Z-
dc.date.created2022-02-17-
dc.date.issued2022-01-
dc.identifier.issn--
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/77267-
dc.languageEnglish-
dc.publisher한국반도체연구조합-
dc.subjectMoS2 FETs-
dc.subjecth-BN dielectric-
dc.subjectSubstrate-biasing effect-
dc.subjectElectrical characterization-
dc.subject2D TMD materials-
dc.titleSubstrate-Biasing Effect on the Operation of Multi-layer MoS2 Field-Effect Transistors with h-BN Dielectric-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation제29회 한국반도체학술대회-
dc.citation.title제29회 한국반도체학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2022-01-24-
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KIST Conference Paper > 2022
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