DSpace at KISTKIST Conference Paper2019

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dc.contributor.authorSo Jeong Park-
dc.contributor.authorDae-Young Jeon-
dc.contributor.authorGyu-Tae Kim-
dc.date.accessioned2024-01-12T05:40:50Z-
dc.date.available2024-01-12T05:40:50Z-
dc.date.created2021-09-29-
dc.date.issued2019-04-
dc.identifier.issn2330-5738-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/78965-
dc.description.abstractA new method to estimate the channel doping concentration (Nd) in highly doped fully-depleted SOI MOSFETs The separation between the threshold voltage (Vth) and the flat band voltage (Vfb) as a function of Nd Confirmation of the validity of proposed method using the twodimensional (2D) simulation and experimental results The method is applied to various device structures consisting of different silicon thicknesses (tSi) and widths.-
dc.languageEnglish-
dc.publisherIEEE-
dc.subjectExtraction method-
dc.subjectDoping concentration-
dc.subjectHighly doped channel-
dc.subjectThreshold voltage-
dc.subjectFlat-band voltage-
dc.subjectNumerical simulation-
dc.titleSimple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationEUROSOI-ULIS2019-
dc.citation.titleEUROSOI-ULIS2019-
dc.citation.conferencePlaceFR-
dc.citation.conferencePlaceGrenoble, France-
dc.citation.conferenceDate2019-04-01-
dc.relation.isPartOf2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS)-
dc.identifier.wosid000565067300044-
dc.identifier.scopusid2-s2.0-85083255068-
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KIST Conference Paper > 2019
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