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dc.contributor.author김성근-
dc.contributor.author이우철-
dc.contributor.author김상태-
dc.contributor.author송현철-
dc.contributor.author백승협-
dc.contributor.author에릭 라슨-
dc.contributor.author김진상-
dc.contributor.author강종윤-
dc.contributor.author크리스토퍼 빌라브스키-
dc.contributor.author염정환-
dc.contributor.author최지원-
dc.date.accessioned2024-01-12T06:06:09Z-
dc.date.available2024-01-12T06:06:09Z-
dc.date.issued2020-02-27-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/79385-
dc.title반도체 메모리 소자의 커패시터 유전막 및 그 제조 방법-
dc.typePatent-
dc.date.registration2020-02-27-
dc.date.application2018-04-25-
dc.identifier.patentRegistrationNumber10-2084608-
dc.identifier.patentApplicationNumber10-2018-0047915-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2018
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