Effects of Al2O3 Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties

Abstract

A ferroelectric device with a III？V semiconductor is one of the promising candidates for high-performance and energy-efficient electronic and photonic applications. These applications require high remanent polarization and low interface trap density. Here, we examined the ferroelectric characteristic and MOS interface property for the InGaAs metal-ferroelectric-insulator-semiconductor (MFIS) ferroelectric capacitor with varying Al 2 O 3 interfacial layer (IL) thickness and crystallization temperature. We found that the atomic layer deposition (ALD)-deposited HfO 2 /ZrO 2 (HZO) nanolaminates are well crystallized with a (111)-oriented orthorhombic phase on InGaAs crystals at the low crystallization temperature of 400 ？ C. By optimizing the IL thickness and crystallization temperature, the InGaAs MFIS ferroelectric capacitor achieves a high remanent polarization while maintaining a low interface trap density. Furthermore, the InGaAs MFIS ferroelectric capacitor also presents good retention over 10 4 s and endurance in 10 5 ？10 6 cycles at 10 kHz.