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dc.contributor.authorKailash Pati Shiva Sankar Hembram-
dc.contributor.authorPark, Jeongwon-
dc.contributor.authorLEE, JAE KAP-
dc.date.accessioned2024-01-12T06:32:25Z-
dc.date.available2024-01-12T06:32:25Z-
dc.date.created2023-11-22-
dc.date.issued2024-03-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/79748-
dc.description.abstractWe elucidate the doping mechanism of suitable elements into borophene with first-principles density functional theory calculation. During doping with nitrogen (N), the sp2 orbitals are responsible for arranging themselves to accommodate the electron of the N atom. Doping dramatically changes structure and electronic properties from corrugated and metallic borophene to flat and insulating h-BN with 100?% N-doping. We extend the mechanism of N-doping in borophene to doping of non-metallic and metallic ad-atoms on borophene. Our findings will help to design boron-based 2D materials.-
dc.languageEnglish-
dc.publisherJohn Wiley and Sons Inc.-
dc.titleUnraveling the Mechanism of Doping Borophene-
dc.typeArticle-
dc.identifier.doi10.1002/open.202300121-
dc.description.journalClass1-
dc.identifier.bibliographicCitationChemistryOpen, v.13, no.3-
dc.citation.titleChemistryOpen-
dc.citation.volume13-
dc.citation.number3-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid001105332600001-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalResearchAreaChemistry-
dc.type.docTypeArticle-
dc.subject.keywordPlus2-DIMENSIONAL BORON-
dc.subject.keywordPlusELECTRONIC-PROPERTIES-
dc.subject.keywordPlusCLUSTERS-
dc.subject.keywordPlus1ST-PRINCIPLES-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordAuthorborophene-
dc.subject.keywordAuthordoping-
dc.subject.keywordAuthorelectronic properties-
dc.subject.keywordAuthorfirst-principles calculations-
dc.subject.keywordAuthorstructure-
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