DSpace at KISTKIST Patent2006

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dc.contributor.author변영태-
dc.contributor.author김선호-
dc.contributor.author송종한-
dc.date.accessioned2024-01-12T07:44:04Z-
dc.date.available2024-01-12T07:44:04Z-
dc.date.issued2007-10-04-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/81265-
dc.title격자 정합된 InGaAs/InGaAsP 다중 양자우물 구조의 광소자용 에피박막층과 그 제조방법-
dc.typePatent-
dc.date.registration2007-10-04-
dc.date.application2006-01-26-
dc.identifier.patentRegistrationNumber10-0766027-
dc.identifier.patentApplicationNumber10-2006-0008217-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2006
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